| 发明名称 |
MAGNETIC FIELD-PARTITIONED NON-VOLATILE MEMORY |
| 摘要 |
A non-volatile memory cell and a magnetic field-partitioned non-volatile memory for multi-bit storage are provided. The non-volatile memory cell for multi-bit storage includes a bottom electrode. A resistance-changing memory material covers the bottom electrode. A top electrode including a high-mobility material is disposed on the resistance-changing memory material. The top electrode has two post portions supporting a bar-shaped portion. At least two bits are stored in portions of the resistance-changing memory material connecting to the top electrode when an external magnetic field is applied along different directions. |
| 申请公布号 |
US2015097152(A1) |
申请公布日期 |
2015.04.09 |
| 申请号 |
US201414510405 |
申请日期 |
2014.10.09 |
| 申请人 |
Industrial Technology Research Institute |
发明人 |
CHEN Frederick T |
| 分类号 |
H01L45/00;H01L49/02 |
主分类号 |
H01L45/00 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A non-volatile memory cell for multi-bit storage, comprising:
a bottom electrode; a resistance-changing memory material covering the bottom electrode; and a top electrode comprising a high-mobility material on the resistance-changing memory material, wherein the top electrode has two post portions supporting a bar-shaped portion; wherein at least two bits are stored in portions of the resistance-changing memory material connecting to the top electrode when an external magnetic field is applied along different directions. |
| 地址 |
Hsinchu TW |
