LOW DEFECT CHEMICAL MECHANICAL POLISHING COMPOSITION

摘要

PROBLEM TO BE SOLVED: To provide a chemical mechanical polishing composition that exhibits low-defect dielectric polishing performance and a tailored silicon oxide removal rate, for use in chemical mechanical polishing (CMP) in planarizing a substrate of a semiconductor or the like.SOLUTION: A chemical mechanical polishing composition comprises, as initial components: water; 0.1 to 40 wt.% of a colloidal silica abrasive; 0.001 to 5 wt.% of an additive according to formula (I). The chemical mechanical polishing composition is free from inclusion compounds and oxidizers. [R1 is a C1-8 alkyl group; and R2 to R6 are each independently H, a halogen, a hydroxyl group or a C1-8 alkyl group.]