GATE INSULATION FILM, ORGANIC THIN FILM TRANSISTOR, AND METHOD FOR MANUFACTURING ORGANIC THIN FILM TRANSISTOR

摘要

PROBLEM TO BE SOLVED: To provide a gate insulation film in which film quality is not changed by heating, chemical treatment and the like for forming electrodes and the like, and which can maintain high flatness when an organic semiconductor layer is formed, and to provide an organic thin film transistor using the gate insulation film, and a method for manufacturing the same.SOLUTION: A gate insulation film is formed by curing: (A) a compound obtained by reacting (a) a dicarboxylate, or a tricarboxylic acid or an acid anhydride thereof and (b) a tetracarboxylic acid or an acid dianhydride thereof, where a molar ratio of a/b is 0.1 to 10, with a compound obtained by reacting a bisphenol type epoxy compound with an ethylenic unsaturated bond group-containing monocarboxylic acid ; (B) a polymerizable monomer having at least one ethylenic unsaturated bond; and (C) a composition containing an epoxy compound. Also provided are An organic transistor in which the composition is applied on a gate electrode and is cured, and a method for manufacturing the same.