| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a semiconductor device having a super junction structure capable of reducing field concentration.SOLUTION: A semiconductor device comprises: a first conductivity type first semiconductor region formed in an element region and an outer peripheral region; a plurality of second conductivity type second semiconductor regions which are arranged on a top face of the first semiconductor region in the outer peripheral region at a distance from each other in a dot shape; an insulation film arranged on the first semiconductor region in the outer peripheral region to cover the second semiconductor regions; and a plurality of polysilicon films arranged inside the insulation film in a direction parallel to the top face of the first semiconductor region and at a distance from each other. The polysilicon film closest to the element region is electrically connected with a gate electrode of a semiconductor element and the polysilicon film closest to an outer edge of the outer peripheral region is electrically connected with a collector electrode of the semiconductor element to form a Zener diode between the neighboring polysilicon films in reverse bias application of the semiconductor device and deplete the whole of the second semiconductor regions.</p> |
