发明名称 CASCODED COMPARATOR WITH DYNAMIC BIASING FOR COLUMN PARALLEL SINGLE SLOPE ADCS
摘要 Aspects of the invention may comprise receiving a first input signal and a second input signal via respective first and second input transistors. A biasing signal, generated by a cascode bias generator, that tracks the first input signal, where the biasing signal has a fixed offset with respect to the first input signal. The biasing signal may be applied to the first and second cascode transistors that may be cascoded to the first and second input transistors, respectively.
申请公布号 US2015097596(A1) 申请公布日期 2015.04.09
申请号 US201414570739 申请日期 2014.12.15
申请人 SK hynix Inc. 发明人 RYSINSKI Jeff;WANG Yibing Michelle;LEE Sang-Soo
分类号 H03M1/36;H03K5/24 主分类号 H03M1/36
代理机构 代理人
主权项 1. Circuitry for processing signals, the circuitry comprising: a first PMOS transistor with a source terminal coupled to a positive voltage supply; a drain terminal of the first PMOS transistor coupled to a source terminal of each of a second PMOS transistor and a third PMOS transistor; a fourth PMOS transistor with a source terminal coupled to the drain terminal of the second PMOS transistor; a fifth PMOS transistor with a source terminal coupled to the drain terminal of the third PMOS transistor; a first NMOS transistor with a drain terminal coupled to a drain terminal of the fourth PMOS transistor, to a gate terminal of the first NMOS transistor, to a drain terminal of a second NMOS transistor, and to a gate terminal of a third NMOS transistor; a fourth NMOS transistor with a drain terminal coupled to a drain terminal of the fifth PMOS transistor, to a gate terminal of the fourth NMOS transistor, and to a drain terminal of the third NMOS transistor, and to a gate terminal of the second NMOS transistor; a source terminal of each of the first NMOS transistor, the second NMOS transistor, the third NMOS transistor, the fourth NMOS transistor coupled to ground; and a cascode bias generator with an output terminal coupled to a gate terminal of the fourth PMOS transistor, to a gate terminal of the fifth PMOS transistor.
地址 Icheon-si KR