| 发明名称 |
INTEGRATED CIRCUITS AND METHODS FOR FABRICATING INTEGRATED CIRCUITS WITH CAPPING LAYERS BETWEEN METAL CONTACTS AND INTERCONNECTS |
| 摘要 |
Integrated circuits and methods for fabricating integrated circuits are provided. In an exemplary embodiment, an integrated circuit includes a metal contact structure, an electrically conductive capping layer formed on the metal contact structure, and a conductive via electrically connected to the metal contact structure through the electrically conductive capping layer. |
| 申请公布号 |
US2015097291(A1) |
申请公布日期 |
2015.04.09 |
| 申请号 |
US201414570617 |
申请日期 |
2014.12.15 |
| 申请人 |
GLOBALFOUNDRIES, Inc. |
发明人 |
Huisinga Torsten;Peters Carsten;Ott Andreas;Preusse Axel |
| 分类号 |
H01L23/522;H01L23/532;H01L23/528 |
主分类号 |
H01L23/522 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. An integrated circuit comprising:
a metal contact structure; an electrically conductive capping layer formed on the metal contact structure; and a conductive via electrically connected to the metal contact structure through the electrically conductive capping layer. |
| 地址 |
Grand Cayman KY |
