METHOD AND STRUCTURE OF FORMING BACKSIDE THROUGH SILICON VIA CONNECTIONS

摘要

A method, and the resulting structure, to make a thinned substrate with backside redistribution wiring connected to through silicon vias of varying height. The method includes thinning a backside of a substrate to expose through silicon vias. Then a thick insulator stack, including an etch stop layer, is deposited and planarized. With a planar insulating surface in place, openings in the insulator stack can be formed by etching. The etch stop layer in the dielectric stack accommodates the differing heights vias. The etch stop is removed and a conductor having a liner is formed in the opening. The method gives a unique structure in which a liner around the bottom of the through silicon via remains in tact. Thus, the liner of the via and a liner of the conductor meet to form a double liner at the via/conductor junction.

主权项

1. A structure comprising:
a substrate having a backside; a first through silicon via having sides, a bottom surface, and a first height protruding from the backside of the substrate; and a first conductor facing the backside of the substrate and in electrical contact with the first silicon via; wherein a first via liner encapsulates the sides and the bottom surface of the first through silicon via.