Channel Epitaxial Regrowth Flow (CRF)

摘要

A Fin-FET fabrication approach and structure are provided using channel epitaxial regrowth flow (CRF). The method includes forming a Fin-FET structure including a Si line on a substrate, shallow trench isolation (STI) oxide on both sides of the Si line on the substrate, and a poly wall on top of and across the STI oxide and the Si line, wherein the Si line is higher than the STI oxide from the substrate. The method further includes thinning the STI oxide and the Si line while maintaining about the same height ratio of the Si line and the STI oxide, and forming a spacer wall adjacent to both sides of the poly wall and further adjacent to Si and STI oxide side walls under the poly wall uncovered due thinning the STI oxide and the Si line.

主权项

1. A Fin-FET structure comprising:
a substrate; a Si line on the substrate; shallow trench isolation (STI) oxide on the substrate on both sides of the Si line, wherein the Si line is higher than the STI oxide from the substrate; a gate structure on top of and across the STI oxide and the Si line and serving as a gate, wherein the Si line and the STI oxide include a non-etched portion under the gate structure and an etched portion in front of the gate structure; and a spacer on a side of the gate structure and on side walls of the non-etched portion of the STI oxide and the Si line under the gate structure.