METHOD FOR RELAXING THE TRANSVERSE MECHANICAL STRESSES WITHIN THE ACTIVE REGION OF A MOS TRANSISTOR, AND CORRESPONDING INTEGRATED CIRCUIT

摘要

The transverse mechanical stress within the active region of a MOS transistor is relaxed by forming an insulating incursion, such as an insulated trench, within the active region of the MOS transistor. The insulated incursion is provided at least in a channel region of the MOS transistor so as to separate the channel region into two parts. The insulated incursion is configured to extend in a direction of a length of the MOS transistor. The insulated incursion may further extend into one or more of a source region or drain region located adjacent the channel region of the MOS transistor.

主权项

1. A method for relaxing transverse mechanical stresses within an active region of a MOS transistor, comprising:
forming at least one insulating incursion into at least a channel region of the MOS transistor, wherein said insulating incursion extends in a direction of a length of the channel region and separates at least the channel region into two parts in a direction of a width of the channel region; wherein the MOS transistor is formed on a substrate of a silicon-on-insulator type comprising a silicon film separated from a carrier substrate by a buried insulating layer, and wherein each insulating incursion is formed in the silicon film.