SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF

摘要

A semiconductor device including a Si (110) substrate, a buffer layer, a first type doped semiconductor layer, a light-emitting layer and a second type doped semiconductor layer is provided. The Si (110) substrate has a plurality of trenches. Each trench at least extends along a first direction, and the first direction is parallel to a <1-10> crystal direction of the Si (110) substrate. The buffer layer is located on the Si (110) substrate and exposes the trenches. The first type doped semiconductor layer is located on the buffer layer and covers the trenches. The light-emitting layer is located on the first type doped semiconductor layer. The second type doped semiconductor layer is located on the light-emitting layer. A fabrication method of a semiconductor device is also provided.

主权项

1. A fabrication method of a semiconductor device, comprising:
providing a silicon (110) substrate, wherein a plurality of trenches are formed on the silicon (110) substrate, each of the trenches at least extends along a first direction, and the first direction is parallel to a <1-10> crystal direction of the silicon (110) substrate; forming a buffer layer on the silicon (110) substrate, the buffer layer exposing the trenches; forming a first type doped semiconductor layer on the buffer layer, the first type doped semiconductor layer covering the trenches; forming a light-emitting layer on the first type doped semiconductor layer; and forming a second type doped semiconductor layer on the light-emitting layer.