ANISOTROPIC MAGNETORESISTIVE (AMR) SENSORS AND TECHNIQUES FOR FABRICATING SAME

摘要

Novel anisotropic magneto-resistive (AMR) sensor architectures and techniques for fabricating same are described. In some embodiments, AMR sensors (50) having barber pole structures (36a, 36b, 36c, 36d, 36e) disposed below corresponding AMR sensing elements (40) are provided. AMR sensors having segmented AMR sensing elements are also described. Fabrication techniques that can be used to fabricate such sensors are also described. Fabrication techniques are also described that can reduce the risk of contamination during AMR sensor fabrication.