| 摘要 |
PROBLEM TO BE SOLVED: To provide a pattern forming method capable of suppressing peeling of a resist film.SOLUTION: A pattern forming method comprises the steps of: forming a first resin layer 31 composed mainly of an organic polymer on a substrate 20 (first resin layer forming step (1)); forming a second resin layer 32 composed mainly of an organic polymer on a surface of the first resin layer 31 (second resin layer forming step (2)); forming a recess 321 in the second resin layer 32 by pressure-welding and desorbing a stamper including a salient in the second resin layer 32 (recess forming step (PR3)); forming a filling part 33 composed mainly of an inorganic polymer in the recess 321 (filling part forming step (PR4)); and etching the first resin layer 31 and the second resin layer 32 using the filling part 33 as a mask (etching step (PR5)). |
