| 发明名称 |
SEMICONDUCTOR DEVICE WITH NON-LINEAR SURFACE |
| 摘要 |
A semiconductor device includes a first channel having a first linear surface and a first non-linear surface. The semiconductor device includes a first dielectric region surrounding the first channel. The semiconductor device includes a second channel having a third linear surface and a third non-linear surface. The semiconductor device includes a second dielectric region surrounding the second channel. The semiconductor device includes a gate electrode surrounding the first dielectric region and the second dielectric region. |
| 申请公布号 |
US2015097218(A1) |
申请公布日期 |
2015.04.09 |
| 申请号 |
US201314046985 |
申请日期 |
2013.10.06 |
| 申请人 |
Taiwan Semiconductor Manufacturing Company Limited |
发明人 |
Chen Xiaomeng;Wu Zhiqiang;Liu Shih-Chang;Chen Chien-Hong |
| 分类号 |
H01L29/10;H01L29/66;H01L29/78 |
主分类号 |
H01L29/10 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor device, comprising:
a first channel having a first linear surface and a first non-linear surface; a first dielectric region surrounding the first channel; a second channel having a third linear surface and a third non-linear surface; a second dielectric region surrounding the second channel; and a gate electrode surrounding the first dielectric region and the second dielectric region. |
| 地址 |
Hsin-Chu TW |
