SILICON CARBIDE SEMICONDUCTOR DEVICE

摘要

This silicon carbide semiconductor device has a substrate (1), drift layer (2), current dispersion layer (3), base region (4), source region (5), trench (7), gate insulating film (8), gate electrode (9), source electrode (12), drain electrode (14), and bottom layer (10). The current dispersion layer is formed on the drift layer, and has a first conductivity-type impurity concentration set higher than that of the drift layer. The bottom layer has a second conductivity type, is disposed below the base region, covers a bottom portion of the trench, including corner portions of the bottom portion of the trench, and has more depth than the current dispersion layer.