GATE INSULATION FILM, ORGANIC THIN FILM TRANSISTOR, AND METHOD FOR MANUFACTURING ORGANIC THIN FILM TRANSISTOR

摘要

PROBLEM TO BE SOLVED: To provide a gate insulation film in which film quality is not changed by heating, chemical treatment, and the like for forming electrodes and the like, and which can maintain high flatness when an organic semiconductor layer is formed, and to provide an organic thin film transistor which has high carrier mobility and can exhibit stable transistor characteristics by using the gate insulation film, and a method for manufacturing the same.SOLUTION: A gate insulation film comprises a cured product obtained by curing (A) a compound obtained by reacting bisphenol type epoxy compound with an ethylenic unsaturated bond group-containing monocarboxylic acid and (B) a composition containing a photoinitiator or a heat polymerization initiator as an essential component, and in the cured product the (A) component is contained in an amount of 40 to 90 mass% and (B) component is contained in an amount of 0.1 to 30 mass%. Also provided are an organic transistor in which the composition is applied on a gate electrode and is cured, and a method for manufacturing the same.