METHOD FOR DOPANT IMPLANTATION OF FINFET STRUCTURES

摘要

PROBLEM TO BE SOLVED: To provide a method for implanting dopant elements in a structure comprising a plurality of semiconductor fins separated by field dielectric areas.SOLUTION: The method includes the steps of: depositing a BARC layer 4 on fins; depositing a resist layer 5 on the BARC layer; removing a portion of the resist layer by lithography steps to thereby expose an area 10 of the BARC layer; removing the BARC layer in the area 10 by a dry etch process using the remaining resist layer as a mask; implanting dopant elements into the fins present in the area 10 using the BARC and resist layers as a mask; and removing the remainder of the resist and BARC layers. The method additionally includes depositing an etch stop layer 3 directly on the fins 1 before the steps of depositing the BARC layer 4 and the resist layer 5.