PROCESS FOR DIRECT BONDING OF TWO ELEMENTS COMPRISING METALLIC PORTIONS AND DIELECTRIC MATERIALS

摘要

Method of assembly of a first element (I) and a second element (II) each having an assembly surface, at least one of the assembly surfaces comprising recessed metal portions (6, 106) surrounded by dielectric materials (4, 104) comprising:
A) a step to bring the two assembly surfaces into contact without application of pressure such that direct bonding is obtained between the assembly surfaces, said first and second assemblies (I, II) forming a stack with a given thickness (e),B) a heat treatment step of said stack during which the back faces (10, 110) of the first (I) and the second (II) elements are held in position so that they are held at a fixed distance (E) between the given stack thickness+/−2 nm.

主权项

1. Method of assembly of a first element and a second element each having a back face and an assembly surface by direct bonding, at least the assembly surface of the first element comprising at least one portion with at least one metal part surrounded by at least one dielectric material, said metal portion having a free surface recessed from the dielectric material at said assembly surface, said method comprising:
A) a step to bring the two assembly surfaces into contact without application of pressure such that direct bonding is obtained between the assembly surfaces, said step taking place at at least one first temperature, said first and second assemblies forming a stack with a thickness, B) a heat treatment step of said stack at at least one second temperature, method in which, during at least a first phase of step B), the back faces of the first and the second elements are held in position so that they are held at a fixed distance between the stack thickness−2 nm and the stack thickness+2 nm.