TRENCH GATE TRENCH FIELD PLATE VERTICAL MOSFET

摘要

In described examples, a semiconductor device (100) having a vertical drain extended MOS transistor (110) may be formed by forming deep trench structures (104) to define at least one vertical drift region (108) of the transistor (110), so that each vertical drift region (108) is bounded on at least two opposite sides by the deep trench structures (104). The deep trench structures (104) are spaced to form RESURF regions for the drift region (108). Trench gates (114) are formed in trenches in a substrate (102) over the vertical drift regions (108). Body regions (118) are located in the substrate (102) over the vertical drift regions (108).