| 摘要 |
<p>A vertical channel SONOS memory including a substrate (110a), a channel (112), a multilayer structure (160), a gate (170a), a first terminal (192) and a second terminal (194) is provided. The channel (112) is protruded from the substrate and has a top surface (112a) and two vertical surfaces (112b). The multilayer structure comprises e.g. an ONO structure (161,162,163) and is disposed on the two vertical surfaces of the channel. The gate straddling the multilayer structure is positioned above the two vertical surfaces of the channel. The first terminal and the second terminal are respectively positioned at two sides of the channel relative to the gate, thereby forming a FinFET device.</p> |
