| 摘要 |
The present invention relates to the use of an amine precursor of formula I
€ƒ€ƒ€ƒ€ƒ€ƒ€ƒ€ƒ€ƒ (X 1 -R 1 ) n -NH (3-n) €ƒ€ƒ€ƒ€ƒ€ƒ(I)
or its ammonium salts for depositing a graphene film having a nitrogen content of from 0 to 65 % by weight on a substrate S1 by chemical vapor deposition (CVD),
wherein
R 1
is selected from
(a)
C 1 to C 10 alkanediyl, which may all optionally be interrupted by at least one of O, N H and NR 2 ,
(b)
alkenediyl, which may all optionally be interrupted by at least one of O, NH and NR 2 ,
(c)
alkynediyl, which may all optionally be interrupted by at least one of O, NH and NR 2 ,
(d)
C 6 to C 20 aromatic divalent moiety, and
(e)
CO and CH 2 CO,
X 1
is selected from H, OH, OR 2 , NH 2 , NHR 2 , or NR 2 2 , wherein two groups X 1 may together form a bivalent group X 2 being selected from a chemical bond, O, NH, or NR 2 ,
R 2
is selected from C 1 to C 10 alkyl and a C 6 to C 20 aromatic moiety which may optionally be substituted by one or more substituents X 1 ,
n
is 1, 2, or 3. |
