发明名称 METHOD FOR FABRICATING CMP SLURRY COMPOSITION FOR POLISHING COPPER FILM AND COPPER CONTAINIG FILM
摘要 <p>The present invention relates to a manufacturing method of a CMP slurry composition for polishing a copper film and a copper-containing film; and to a method for polishing a copper film and a copper-containing film by using the CMP slurry composition. The manufacturing method of the CMP slurry composition comprises the steps of: manufacturing a slurry composition including abrasive grains, a copper complexing agent, an oxidizing agent, an anticorrosive agent, and water; and passing the slurry composition through a cation exchange resin. The present invention can manufacture abrasive grains with low contents of metallic impurities via a filtration process using a cation exchange resin; and can minimize the use of a pH adjusting agent to make the slurry composition into an acidic slurry composition. Therefore, the CMP slurry composition can be used in various CMP processes of a copper film, a copper-containing film, a soft dielectric film, etc. In the case of using the slurry composition according to the manufacturing method of the present invention, the slurry composition shows high abrasion rate and has an excellent effect in reducing scratches and defects so the surface state of a copper film can be maintained without damage.</p>
申请公布号 KR20150036909(A) 申请公布日期 2015.04.08
申请号 KR20130115917 申请日期 2013.09.30
申请人 发明人
分类号 C09K3/14;H01L21/304 主分类号 C09K3/14
代理机构 代理人
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