| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a plasma processing apparatus in which endpoint detection can be conducted accurately even in short etching for processing a thin film by multiple conditions. <P>SOLUTION: In short etching for processing a thin film by multiple process conditions, variation in emission incident to change of process conditions is corrected by an emission data corrector thus detecting an endpoint stably. <P>COPYRIGHT: (C)2012,JPO&INPIT</p> |
