| 摘要 |
A III nitride semiconductor epitaxial substrate having more excellent surface flatness is provided, in which the problems of crack formation and the double peaks in the shape of the EL spectrum are mitigated by employing appropriate conditions for Si doping on an AlN layer on a substrate; a III nitride semiconductor light emitting device; and methods of producing the same. A III nitride semiconductor epitaxial substrate has a substrate of which at least a surface portion is made of AlN, an undoped AlN layer formed on the substrate, an Si-doped AlN buffer layer formed on the undoped AlN layer, and a superlattice laminate formed on the Si-doped AlN buffer layer. The Si-doped AlN buffer layer has an Si concentration of 2.0×1019/cm3 or more and a thickness of 4 nm to 10 nm. |
