SiC SINGLE-CRYSTAL INGOT, SiC SINGLE CRYSTAL, AND PRODUCTION METHOD FOR SAME

摘要

Provided are an SiC single-crystal ingot containing an SiC single crystal having a low threading dislocation density and low resisitivity; an SiC single crystal; and a production method for the SiC single crystal. The SiC single crystal ingot contains a seed crystal and a grown crystal grown by a solution process in which the seed crystal is the base point, the grown crystal of the SiC single crystal ingot containing a nitrogen density gradient layer in which the nitrogen content increases in the direction of growth from the seed crystal.