| 摘要 |
1,096,069. Semi-conductor devices. HUGHES AIRCRAFT CO. May 16, 1966 [June 8, 1965], No. 21561/66. Heading H1K. The manufacture of a semiconductor device consisting of an oxide-coated semi-conductor body enclosed in a glass envelope includes the step of heating the body after formation of its PN junction or junctions, and/or the envelope, in an atmosphere containing phosphorus pentoxide or arsenic trioxide or phosphorus oxychloride. Such heat treatment is stated to improve the high-voltage hightemperature performance of the completed device. The device of Fig. 1 is silicon diode whose electrodes 6, 12 are bonded to the metallic end caps 26, 28 of a housing whose body 24 is of glass. The diode is formed by a conventional diffusion process which leaves an oxide layer 10 on the surface containing the PN junction 16. The heat treatment takes place in a chamber (Fig. 5, not shown) before the device is assembled in its housing. Into the chamber are placed the glass portions 24 of each device housing and/or the semi-conductor bodies at the stage when the junction 16 and oxide layer 10 have been formed but before the electrode 12 is applied. At this stage a plurality of the diodes may be in a single body, which is diced subsequently. The treatment temperature is 400-500‹ C. After such treatment of the semi-conductor bodies a second oxide layer 18 is formed (by heating to a higher temperature in the same chamber or by decomposition of oxide-forming material at a lower temperature in a separate chamber) and the electrode 12 formed. After treatment, the diode is mounted on the end cap 26, the glass body 24 is placed around it, the end cap 22 is placed on that and the whole device heated to a temperature at which the glass becomes plastic; this seals the glass to the caps and brings the cap 28 into contact with the electrode 12 which becomes bonded to it. A weight may be applied to the cap 22 to facilitate this final stage of assembly. |
