发明名称 Radiation detector and method
摘要 <p>A detector comprises a pixel element array, comprising a column of pixel elements 510, each further comprising a source follower input transistor 531; pixel elements apply a potential to a gate terminal of the source follower input transistor based on cumulative charge carriers generated by the pixel element. A source of each source follower input transistor 531 is connectable by a bias line select transistor 531S1 to a bias current BIAS1 signal line of the column having a bias current portion 550 (e.g. constant current source). The source follower input transistor 531 and bias current portion 550 form a source follower arrangement via the bias line select transistor, the source of the source follower being further connectable by means of a respective output line select transistor 532S1 to a column output signal line OUTP1 separate from the bias signal line. The column may comprise respective first and second (plural) bias current signal lines, each with a bias current portion; respective first and second (plural) output signal lines (with potential applied to both at same time) may also be provided. Bias and output signal line electrical connectors may be provided along a single common side of the detector.</p>
申请公布号 GB2508493(B) 申请公布日期 2015.04.08
申请号 GB20130017817 申请日期 2012.02.13
申请人 ISDI LIMITED 发明人 THALIS ANAXAGORAS
分类号 H04N5/3745;H01L27/146 主分类号 H04N5/3745
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