发明名称 化学蒸着エッチングチャンバから副生成物の堆積物を除去するインサイチュチャンバ洗浄プロセス
摘要 PROBLEM TO BE SOLVED: To provide a method and device for cleaning a processing chamber.SOLUTION: A method and device comprise the steps of: blocking a cooling fluid flow into a channel in a support member in a processing chamber; lifting the support member so as to be within about 0.1 inch from a gas distribution plate; heating the gas distribution plate; and introducing a heat-transfer gas to the processing chamber through the gas distribution plate. In an embodiment, a chamber comprises: a chamber body; and a support assembly at least partially disposed in the chamber body and adapted to support a substrate on it. The chamber further comprises a lid assembly disposed on an upper face of the chamber body. The lid assembly includes a top part plate and a gas distribution assembly defining a plasma cavity between the top part plate and the gas distribution assembly, and is adapted so that the gas distribution assembly heats the substrate. A remote plasma source having a U-type plasma region is connected to the gas distribution assembly.
申请公布号 JP5698719(B2) 申请公布日期 2015.04.08
申请号 JP20120204729 申请日期 2012.09.18
申请人 アプライド マテリアルズ インコーポレイテッドAPPLIED MATERIALS,INCORPORATED 发明人 カオ, チェン‐テー;チョウ, ジン‐ペイ(コニー);ウモトイ, サルバドル, ピー.;チャン, メイ;ユアン, シャオシャン(ジョン);チャン, ユウ;ルー, シンリアン;ファン, シー‐エン;クアン, ウィリアム;ツウ,グォ−チュアン;オア, デイヴィッド ティー.
分类号 H01L21/316;H01L21/205;H01L21/3065 主分类号 H01L21/316
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