| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a graphene transistor having large gate capacity that is not obtained before, and to provide a method of manufacturing the same. <P>SOLUTION: The graphene transistor has an insulating film disposed between graphene and a low-resistance substrate, and is characterized in that the whole insulating film is formed of a homogeneous composition and has a relative permittivity of≥4, a basic element of the insulating film and a basic element of the substrate are different, and the insulating film has a thickness such that an interference contrast in the visible light range with which the graphene can be observed through an optical microscope is provided. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
