发明名称 SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS
摘要 The present invention has the subject of providing a substrate processing method and a substrate processing apparatus which can effectively remove contaminant generated by affected by fluorine ion generated during rubbing process. A substrate processing apparatus processing rubbed substrate used in a liquid crystal display panel comprises a first process (11) cleaning the substrate by nitrogen gas-dissolved water formed by dissolving gas at least including in water, wherein the temperature of the nitrogen gas-dissolved water is adjusted in a range of 40°C or more and 80°C or less.
申请公布号 KR20150037554(A) 申请公布日期 2015.04.08
申请号 KR20140126670 申请日期 2014.09.23
申请人 시바우라 메카트로닉스 가부시끼가이샤 发明人 오모리 게이고;이소 아키노리;이마오카 유이치;데시마 리에
分类号 G02F1/13 主分类号 G02F1/13
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