ORGANOAMINODISILANE PRECURSORS AND METHODS FOR DEPOSITING FILMS COMPRISING SAME

摘要

Described herein are precursors and method for forming silicon-containing films. In one aspect, provided is a precursor of chemical formula I, wherein R^1 is selected from linear or branched C_3 to C_10 alkyl group, linear or branched C_3 to C_10 alkenyl group, linear or branched C_3 to C_10 alkynyl group, C_1 to C_6 dialkylamino group, electron withdrawing group, and C_6 to C_10 aryl group; and R^2 is selected from hydrogen, linear or branched C_1 to C_10 alkyl group, linear or branched C_3 to C_6 alkenyl group, linear or branched C_3 to C_6 alkynyl group, C_1 to C_6 dialkylamino group, C_6 to C_10 aryl group, linear or branched C_1 to C_6 fluorinated alkyl group, electron withdrawing group, and C_4 to C_10 aryl group.