发明名称 多層膜キャパシタ構造及び方法
摘要 <p>A method of reducing the variation of capacitance with voltage or of increasing the voltage at which significant leakage current begins to flow in a ferroelectric film capacitor having first and second electrodes each of a first selected area with a dielectric layer between them, is described. The film capacitor is formed as a multi-layer film capacitor structure having a plurality of film layers of dielectric material alternating with a plurality of film electrode layers to form a monolithic structure comprising a stack of capacitors arranged substantially in series, each of said electrode layers having a further selected area, each further selected area being larger than said first selected area by a factor which is approximately equal to the number of said electrode layers of said multi-layer film capacitor structure minus 1. Alternatively, the stack of capacitors are arranged electrically in series, and comprise a lower capacitor, an upper capacitor, and an intermediate capacitor between the lower and upper capacitors, the intermediate capacitor being of substantially smaller capacitance value than the upper and lower capacitors and being protected from environmental influences by the upper and lower capacitors, the upper, lower and intermediate capacitors are arranged in series with the upper and lower capacitors including means adapted to be connected to a circuit. <IMAGE></p>
申请公布号 JP5695628(B2) 申请公布日期 2015.04.08
申请号 JP20120237968 申请日期 2012.10.29
申请人 发明人
分类号 H01G4/38;H01L21/822;H01G4/232;H01G4/30;H01G4/33;H01L21/02;H01L27/04;H01L27/08 主分类号 H01G4/38
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