Device for measuring a temperature of a high-power semiconductor

摘要

The device (100) has an applying device (104) for applying an alternating voltage to a power semiconductor (102). A measuring device (106) measures an impedance between a gate terminal (108) of the power semiconductor and an emitter terminal (110) of the power semiconductor. A temperature-dependant gate resistor (112) is integrated in the power semiconductor. The impedance is based on the resistor. The applying device is designed to select a frequency of the alternating voltage such that capacitive and/or inductive portions of measurement are reduced. An independent claim is also included for a method for measuring a temperature of a power semiconductor.