| 摘要 |
<p>In embodying a reconfigurable electronic device, the present invention greatly increases the degree of integration by embodying an upper gate and a lower gate, independently, compared to an existing reconfigurable electronic device having the same function. When a reconfigurable circuit operation is carried out based on an independent lower electrode array having a nonvolatile memory function in a device, dynamical parasitic component and the complexity of a line can be reduced. Thus, power consumption can be reduced. Also, the present invention is to provide a device which has superior properties such as the multifunction of a multifunctional device, the align margin of a process, an extremely electrical doping performance in a channel, comparability with the top-down type and bottom-up type method of the process, the matching property of 1D and 2D materials, etc, compared to an existing reconfigurable device.</p> |
