| 摘要 |
<p>[Problem] To provide a substrate processing device that can recover phosphoric acid used in the etching process in a more efficient manner without relying on expensive equipment. [Solution] This is a substrate processing device that processes the nitrate film-formed silicon substrate (W) with phosphoric acid-containing etching solution. The present invention consists of the etching processing unit (30) that processes the etching process on each substrate by applying a certain amount of etching solution to each substrate and removes the nitrate film; the phosphoric acid-recovery unit (30) that recovers phosphoric acid by mixing a proper amount of hydrofluoric acid in proportion to the amount of etching solution used in processing a substrate under a given temperature condition; and the phosphoric acid-collection unit (38, 50, 52) that collects the phosphoric acid recovered in the recovery unit to return to etching solution to be used again in the etching processing unit.</p> |
