| 摘要 |
<p>A light emitting diode chip according to an embodiment includes a first pattern region having at least one recess part, and a second pattern which surrounds the first pattern region. The first pattern region includes a first conductivity type nitride semiconductor layer, an active layer, a second conductivity type nitride semiconductor layer, an upper electrode, and an upper bump layer which are successively are formed on a substrate. The second pattern region includes a first conductivity type nitride semiconductor layer, a lower electrode, and a lower bump layer which are stacked on the substrate. The first pattern region has at least one recessed pattern facing the lower bump layer.</p> |
