| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a susceptor for epitaxial growth that allows formation of a uniform and highly reliable thin film without the occurrence of crystal defects or unevenness of film thickness. <P>SOLUTION: A susceptor for epitaxial growth includes a recess 12 on a wafer-mounting surface 11 for mounting a wafer. The recess 12 has a convex surface 13 on the bottom thereof, and has a central axis O<SB POS="POST">1</SB>. A cross section obtained by dividing the wafer-mounting surface 11 vertically and including the central axis of the recess 12 has a region that projects outward beyond the circumference of the circle passing the upper end on the central axis O<SB POS="POST">1</SB>and the outer edge of the convex surface 13, in the intermediate portion of the cross section between the central axis O<SB POS="POST">1</SB>and the outer edge. <P>COPYRIGHT: (C)2013,JPO&INPIT</p> |
