发明名称 |
Semiconductor device and method of manufacturing |
摘要 |
A diode comprising a reduced surface field effect trench structure, the reduced surface field effect trench structure comprising at least two trenches formed in a substrate and separated from one another by a joining region of the substrate, the joining region comprising an electrical contact and a layer of p-doped semiconductor material. |
申请公布号 |
EP2858117(A1) |
申请公布日期 |
2015.04.08 |
申请号 |
EP20130187183 |
申请日期 |
2013.10.02 |
申请人 |
NXP B.V. |
发明人 |
BOETTCHER, TIM;FISCHER, JAN |
分类号 |
H01L29/861;H01L21/329;H01L29/165;H01L29/40;H01L29/872 |
主分类号 |
H01L29/861 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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