| 摘要 |
1,060,668. Zener diodes. HITACHI SEISAKUSHO KABUSHIKI KAISHA. Nov. 14, 1963 [Nov. 14, 1962], No. 45102/63. Heading HIK. A temperature cornpensated Zener diode consists of an integral structure of layers in the sequence NPN - metal- NP or PNP-metal-PN, the layers forming two Zener junctions in series aiding relationship and one in opposition. A typical structure is formed from a 0À04 ohm cm. N-type silicon wafer 'and a PN wafer formed by diffusing boron into such an N wafer. After nickel plating the outer faces of the wafers a gold-gallium alloy foil 7 is sandwiched between the inner faces as shown in Fig. 2 and alloyed thereto to form two further PN junctions. Finally the integral structure is ultrasonically cut into smaller elements each exhibiting a temperature coefficient of Zener voltage of 0À00018 V/‹C. Use of germanium and AIII BV compounds in place of silicon is suggested. |
