| 摘要 |
1,060,725. Semi-conductor devices. CSFCOMPAGNIE GENERALE DE TELEGRAPHIE SANS FIL. Oct. 25, 1963 [Nov. 2. 1962], No. 42292/63. Heading H1K. A method of making a field effect device includes the steps of diffusing impurity into a surface area of an N(P) type silicon wafer part of which is partially masked by a thin layer of silica, to form a P(N) sub-surface region which is thinner beneath the silica layer. A plurality of such devices is made from a P-type wafer by first heating in wet oxygen to form an oxide layer which is then selectively removed by photo-engraving techniques to expose the silicon through a plurality of windows. After forming a central thinner strip of silica across each window, as above, phosphorus is diffused in to form N-type layers which are thinner beneath the strips. Each device configuration is then provided by evaporation of gold or aluminium with strip form electrodes consisting of source 7 and drain 8 (Fig. 2) on the N-type layer 5 and gates 6 on the silica strip 4, and 13 on the back face of the wafer. In an alternative form (Fig. 3, not shown) the central strips are replaced by strips of zigzag form and the source and drain electrodes are comb-shaped.
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