| 摘要 |
Provided are a polysiloxane resin composition for forming a reversed pattern, which can be satisfactorily embedded in a space of a mask pattern, said mask pattern being formed on a substrate to be processed, without being mixed with the mask pattern, and has good dry-etching resistance and high storage stability, and a method for forming a reversed pattern using said polysiloxane resin composition. The method for forming a reversed pattern, which comprises: a mask pattern-forming step (1) for forming a mask pattern on a substrate to be processed; an embedding step (2) for embedding a polysiloxane resin composition in a space of said mask pattern; and a reversed pattern-forming step (3) for removing said mask pattern and forming a reversed pattern, is characterized in that said polysiloxane resin composition comprises a polysiloxane [A] having a specific structure and an organic solvent [B] having a specific structure. |
