| 摘要 |
<p>The present invention relates to a semiconductor device structure having bidirectional breakdown properties generating a breakdown in a forward direction and in a reverse direction. The semiconductor device structure includes: a semiconductor substrate; multiple semiconductor epilayers which are epitaxial by having a concentration different from a conductivity type in the upper part of the semiconductor substrate; an activation unit which is formed by etching the multiple epilayers at predetermined intervals for a separation between devices; an insulation film which is formed on the remaining upper surface except a contact window of the activation unit; and a metal film which is formed on the contact window of the activation unit for an Ohmic contact with the activation unit. Upper and lower epilayers of the activation unit have the same conductivity type. At least two middle epilayers between the upper and lower epilayers have a concentration lower than the concentration of the upper and lower epilayers and have an opposite conductivity type. And a breakdown voltage can be independently controlled by forming a p-n junction respectively in the upper and lower parts of the activation unit. The semiconductor device structure having bidirectional breakdown properties generating a breakdown in a forward direction and in a reverse direction and a manufacturing method thereof: have bidirectional breakdown properties by independently controlling a breakdown voltage in the forward and reverse directions of a device using semiconductor epilayers of a low concentration and semiconductor epilayers of a high concentration; and enhance the environment-tolerant performance of the device when being exposed to conditions such as moisture, heat, light, and reaction gas by depositing a metal thin film having a TATA structure.</p> |
