| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a method of etching a silicon substrate which achieves more uniform texture formation. <P>SOLUTION: According to a method of etching a silicon substrate, the silicon substrate is etched by immersing the silicon substrate in a chemical tank filled with an etching chemical solution of an alkaline aqueous solution containing an additive agent that adheres to a surface of the silicon substrate and locally inhibits etching. The chemical tank can control the temperature of the etching chemical solution. The method of etching the silicon substrate includes: a first etching step of performing etching of the silicon substrate by setting the temperature of the etching chemical solution at a first temperature immediately after the silicon substrate is immersed in the etching chemical solution; and a second etching step of performing etching of the silicon substrate by setting the temperature of the etching chemical solution at a second temperature higher than the first temperature after the first etching step. <P>COPYRIGHT: (C)2013,JPO&INPIT</p> |
