| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor device that allows high integration of field-effect transistors having a lateral double-diffused structure. <P>SOLUTION: A semiconductor device 1N comprises: a P-type body region 20P that extends along a first side of both sides in the width direction of a gate electrode 17; an N-type body region 20N that extends along a second side; a P-type impurity diffusion region 32P that is formed at the first side and is bonded to the P-type body region 20P; an N-type impurity diffusion region 32N that is formed at a position facing the P-type impurity diffusion region 32P at the second side and is bonded to the N-type body region 20N; an N-type impurity diffusion region 31N that is formed at the first side and is bonded to the P-type body region 20P; and a P-type impurity diffusion region 31P that is formed at a position facing the N-type impurity diffusion region 31N at the second side and is bonded to the N-type body region 20N. <P>COPYRIGHT: (C)2013,JPO&INPIT</p> |
