发明名称 |
RESIN-SEALED SEMICONDUCTOR DEVICE AND PRODUCTION METHOD FOR RESIN-SEALED SEMICONDUCTOR DEVICE |
摘要 |
A resin-sealed semiconductor device 10 of the present invention includes : a mesa-type semiconductor element 100 which includes a mesa-type semiconductor base body having a pn-junction exposure portion in an outer peripheral tapered region which surrounds a mesa region, and a glass layer which covers at least the outer peripheral tapered region; and a molding resin 40 which seals the mesa-type semiconductor element 100, wherein the mesa-type semiconductor element 100 includes a glass layer which substantially contains no Pb as the glass layer. The resin-sealed semiconductor device of the present invention can acquire higher resistance to a reverse bias at a high temperature than a conventional resin-sealed semiconductor device, although the resin-sealed semiconductor device of the present invention has the structure where the mesa-type semiconductor element is molded with a resin in the same manner as the conventional resin-sealed semiconductor device. |
申请公布号 |
EP2858098(A1) |
申请公布日期 |
2015.04.08 |
申请号 |
EP20120876406 |
申请日期 |
2012.05.08 |
申请人 |
SHINDENGEN ELECTRIC MANUFACTURING CO., LTD. |
发明人 |
OGASAWARA, ATSUSHI;ITO, KOJI;ITO, KAZUHIKO;MUYARI, KOYA |
分类号 |
H01L21/316;C03C3/064;C03C3/085;C03C3/087;C03C3/093;H01L23/29;H01L23/31;H01L29/861;H01L29/868 |
主分类号 |
H01L21/316 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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