发明名称 Wafer processing method and method for fabricating semiconductor device using the same processing method
摘要 <p>The technical idea of the present invention is to provide a wafer processing method and a method for fabricating semiconductor device using the same method. In a process of combining a device wafer with a carrier wafer for the back grinding process of the device wafer and a process of separating the device wafer from the carrier wafer after the back grinding process, the wafer processing method is to accurately arrange the device wafer and combine, and easily combine and separate the same. The wafer processing method includes: a step of arranging a first magnetic material on the front side of a wafer, arranging a second magnetic material on a carrier wafer, and arranging the first and the second magnetic materials to have the opposite surfaces of the first magnetic material and the second magnetic material which have opposite polarity; a step of arranging the wafer on the carrier wafer and combining them by using the magnetic force of attraction between the first and the second magnetic material; a step of making the back side of the wafer thin; and a step of separating the wafer from the carrier wafer.</p>
申请公布号 KR20150037146(A) 申请公布日期 2015.04.08
申请号 KR20130116458 申请日期 2013.09.30
申请人 发明人
分类号 H01L21/20;H01L21/304 主分类号 H01L21/20
代理机构 代理人
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