发明名称 Complex passive design with special via implementation
摘要 This disclosure provides systems, methods and apparatus for vias in an integrated circuit structure such as a passive device. In one aspect, an integrated passive device includes a first conductive trace and a second conductive trace over the first conductive trace with an interlayer dielectric between a portion of the first conductive trace and the second conductive trace. One or more vias are provided within the interlayer dielectric to provide electrical connection between the first conductive trace and the second conductive trace. A width of the vias is greater than a width of at least one of the conductive traces.
申请公布号 US9001031(B2) 申请公布日期 2015.04.07
申请号 US201213562168 申请日期 2012.07.30
申请人 QUALCOMM MEMS Technologies, Inc. 发明人 Lo Chi Shun;Lan Je-Hsiung Jeffrey;Velez Mario Francisco;Mikulka Robert Paul;Zuo Chengjie;Yun Changhan Hobie;Kim Jonghae
分类号 G09G5/00;H01B13/00;H01F17/00;H01F27/28;H01L23/522;H01L49/02;G02B26/00 主分类号 G09G5/00
代理机构 Weaver Austin Villeneuve & Sampson LLP 代理人 Weaver Austin Villeneuve & Sampson LLP
主权项 1. An integrated passive device, comprising: a substrate; a first conductive trace over the substrate; a second conductive trace over the first conductive trace; and an interlayer dielectric between a portion of the first conductive trace and the second conductive trace to electrically isolate the first conductive trace from the second conductive trace, the interlayer dielectric having a hole, the hole being at least partially filled and defining a via to provide direct electrical connection between the conductive traces, wherein a width of the hole is greater than a width of each of the conductive traces, both widths being lateral dimensions of the device.
地址 San Diego CA US