| 发明名称 |
Semiconductor device and structure |
| 摘要 |
A device including a first layer of first transistors interconnected by at least one first interconnection layer, where the first interconnection layer includes copper or aluminum, a second layer including second transistors, the second layer overlaying the first interconnection layer, where the second layer is less than about 2 micron thick, where the second layer has a coefficient of thermal expansion; and a connection path connecting at least one of the second transistors to the first interconnection layer, where the connection path includes at least one through-layer via, where the at least one through-layer via is formed through and in direct contact with a source or drain of at least one of the second transistors. |
| 申请公布号 |
US9000557(B2) |
申请公布日期 |
2015.04.07 |
| 申请号 |
US201213423200 |
申请日期 |
2012.03.17 |
| 申请人 |
|
发明人 |
Or-Bach Zvi;Sekar Deepak C.;Cronquist Brian |
| 分类号 |
H01L23/532;H01L21/822;H01L21/84;H01L27/06;H01L27/12;H01L21/8238 |
主分类号 |
H01L23/532 |
| 代理机构 |
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代理人 |
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| 主权项 |
1. A device comprising:
a first layer of first transistors interconnected by at least one first interconnection layer, wherein said first interconnection layer comprises copper or aluminum; a second layer comprising second transistors, said second layer overlaying said first interconnection layer, wherein said second layer is less than about 2 micron thick, wherein said second layer has a coefficient of thermal expansion; and a connection path connecting at least one of said second transistors to said first interconnection layer,
wherein said connection path comprises at least one through-layer via,wherein said at least one through-layer via is formed through and in direct contact with a source or drain of at least one of said second transistors, andwherein said through-layer via comprises material whose co-efficient of thermal expansion is within about 50 percent of said second layer coefficient of thermal expansion. |
| 地址 |
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