Semiconductor integrated circuit device having analog circuit separated from digital circuit using resistive and capacitive element regions

摘要

In a semiconductor integrated circuit device including a digital circuit region in which a digital circuit is formed, and an analog circuit region in which an analog circuit is formed, the analog circuit region is separated into an active element region in which an active element of the analog circuit is formed, and a resistive and capacitive element region in which a resistor or a capacitor of the analog circuit is formed, the resistive and capacitive element region is arranged in a region adjacent to the digital circuit region, and the active element region is arranged in a region separated from the digital circuit region.

主权项

1. A semiconductor integrated circuit device comprising:
a semiconductor substrate; a digital circuit formed on the semiconductor substrate; an analog circuit formed on the semiconductor substrate, wherein the analog circuit includes an active element, a resistor, and a capacitor, wherein a surface of the semiconductor substrate is separated into a digital circuit region in which the digital circuit is formed, and an analog circuit region in which the analog circuit is formed, wherein the analog circuit region is separated into an active element region in which the active element is formed, and a resistive and capacitive element region in which the resistor and the capacitor are formed; and a guard band provided in a boundary between the active element region and the resistive and capacitive element region, wherein the resistive and capacitive element region is arranged in a region adjacent to the digital circuit region, wherein the active element region is arranged in a region separated from the digital circuit region, wherein the resistive and capacitive element region is separated into a resistive element region in which the resistor is formed, and a capacitive element region in which the capacitor is formed; and wherein the resistive element region and the capacitive element region are separated from each other in a plan view taken in a direction perpendicular to the surface of the semiconductor substrate.