Method and apparatus for modeling multi-terminal MOS device for LVS and PDK

摘要

An apparatus comprises two n-type metal oxide semiconductor (MOS) devices formed next to each other. Each n-type MOS device further includes a pair of face-to-face diodes formed in an isolation ring. A method of modeling the apparatus comprises reusing four-terminal MOS device models in standard cell libraries and combining the four-terminal MOS device model and the isolation ring model into a 4T MOS plus isolation ring model. The method of modeling the apparatus further comprises adding a dummy device between a body contact of the first n-type MOS device and a body contact of the second n-type MOS device.

主权项

1. An apparatus comprising:
a first n-type metal oxide semiconductor (MOS) device comprising:
a first drain formed on a first p-type well;a first gate;a first source formed on the first p-type well;a first body contact formed on the first p-type well; anda first deep n-type well formed between the first p-type well and a p-type substrate; a second n-type MOS device formed adjacent to the first n-type MOS device comprising:
a second drain formed on a second p-type well;a second gate;a second source formed on the second p-type well;a second body contact formed on the second p-type well; anda second deep n-type well formed between the second p-type well and the p-type substrate, wherein the second deep n-type well and the first deep n-type well are separated by the p-type substrate; and a dummy device formed between the first body contact and the second body contact, wherein the first body contact is surrounded by a first isolation tub laterally and longitudinally and the second body contact is surrounded by a second isolation tub laterally and longitudinally, and wherein the dummy device is across the first isolation tub and the second isolation tub, and wherein the dummy device is connected to a first voltage potential through a first diode and connected to a second voltage potential through a second diode, and wherein the first voltage potential is different from the second voltage potential.