Semiconductor device having varying p-top and n-grade regions

摘要

An improved semiconductor is provided whereby n-grade and the p-top layers are defined by a series of discretely placed n-type and p-type diffusion segments. Also provided are methods for fabricating such a semiconductor.

主权项

1. A semiconductor comprising:
a p-substrate; a high voltage n-well (HVNW) disposed in the p-substrate; a first p-well formed in the p-substrate having a first p+ doped region; a second p-well formed in the HVNW having a second p+ doped region adjacent to an n+ doped source region; and a discrete n-grade and p-top region disposed in the HVNW, the discrete n-grade and p-top region having two or more layers defined by a plurality of p-top segments dispersed among a plurality of n-grade segments, wherein the two or more layers comprise al least one n-grade segment located beneath one or more p-top segments.